MAYLOON ELECTRONIC COMPANY LIMITED
CDBAV21W (1206)
PRODUCTS SERIES   200V  0.25A
CD4148WTP (0603) High Voltage Chip Switching Diode
CD4148WSP (0805)
PDF:
CDBAV21W
CD4148WSPN FEATURE:
CD4148WP (1206) ùþ Silicon epitaxial planer diode.
CD4148WPN (1206) ùþ SMD chip pattern, available in various dimension included 0805 
CDMMBD4148 (SOT-23) ùþ  Lead free and RoHS compliance components.
CDBAV21WS (0805)
CDBAV21W (1206) MECHANICAL CHARACTERISTICS: 
CDBAV70 (SOT-23) ùþ Size :  1206
CDBAV99 (SOT-23) ùþ Weight: Approx 10mg.
CDBAW56 (SOT-23) ùþ Marking: Bar as cathode terminal;
LL-4148 (DO-35)    21 as VRRM 250V high voltage switching diode.
Mounting Pad Layout Demo
Chip Zener Diode DIMENSION:
Dimension (mm) Type: 1206
L 3.2 ¡Ó 0.2 W    T
W 1.5 ¡Ó 0.2
T 0.85 ¡Ó 0.1
C 0.55 ¡Ó 0.2 C
L
THERMAL CHARACTERISTICS:
Parameter at Tamb = 25¢J Symbol  Value Unit
Forwar Power Dissipation Ptot 400¹ mW
Power derating above 25¢J
3.2 mW/¢J
Junction Temperature Tj 150¹ ¢J
Thermal Resistance Junction to Ambient air Roja 375¹ ¢J/W
Storage Temperature range Tstg -55 to 150¹ ¢J
1. Valid provided that electrodes are kept at ambient temperature.
MAXIMUM RATING:
Parameter at Tamb = 25¢J Symbol  Value Unit
Continue Reverse Voltage VR 200 V
Repetitvite Peak Reverse Voltage VRRM 250 V
Non-Repetitive Peak Recerse Voltage VRSM 250 V
Continous Forward Current IF 250¹ mA
Average rectified current sin half wave IF(AV) 200¹ mA
rectification with resistive load. 200¹ mA
Repetitive Peak Forward Currnet at IFRM 625¹ mA
f ¡Ù50HZ, £c = 180¢X, Tamb = 25¢J
Surge Forward Current at t<1s and Tj=25¢J IFSM 1000¹ mA
1. Valid provided that electrodes are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS:
Parameter at Tamb = 25¢J Symbol  Value Unit
Forward Voltage at  IF = 100mA VF 1.0 max V
¡@  at   IF = 200mA 1.25 max V
Leakage Current at  VR = 200V ¡@ IR 0.1 max uA
Leakage Current at  VR = 200V, Tj = 100¢J 15 max uA
Capacitance at  VR = 0V,  F= 1MHZ Ctot 5 max pF
Reverse Recovery Time  ¡@ trr 50 max ns
at IF=IR=30mA, RL=100 £[ ¡@