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DF500S-DF10S

Schottky Diode - Schottky Diode (肖特基貼片二極管)

按此還有更多 貼片型橋式整流二極管

PDF File DF005S - DF10S (50V-1000V)

SINLOON® 貼片型橋式整流二極管 DF005S-DF10S
Current : 1.0A Surface Mount Glass Passivated Bridge Rectifier
Maximum Ratings @TA=25℃ unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load, For capacitive load, derate current by 20%.
Characteristic Symbol DF Unit
005S 01S 02S 04S 06S 08S 10S
Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @TA=40℃ IO 1.0 A
Non-Repetitive Peak Forward Surge Current IFSM 50 A
8.3ms single half sine-wave superimposed
on Rated load (JEDC Method)
Forward Voltage per element @IF=40℃ VFM 1.1 V
Peak Reveres Current @TA=25℃ IRM 5.0 μA
At Rated DC Blocking Voltage @TA=125℃ 500
I2t Rating for Fusing (t<8.3ms) V2t 10 A2s
Typical Junction Capacitance leg (note1) CJ 25 pF
Typical Thermal Resistance per leg (note2) RθJA 40 ℃/W
RθJL 15
Operating and Storage Temperature Range TJ,TSTG -65 to +150 ℃
Note: 1. Measured at 1.0MHz and applied reverse voltage of 4.0VDC. Return to Schottky Diode First Page
2. Mounted on PC Board with 13x13mm copper pad.

Bridge Rectifier

 

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Latest News

Newsflash

TO247 Power Resistor - 100W

按此還有更多 更多... TO247 100W 功率電阻系列

TO247 100W 厚膜功率電阻

特點:
◆ 大功率, 無感,安裝容易。High-power, non-inductive, easy to install。
◆ M3螺絲固定壓孔,增強電阻熱導性。M 3 screw hole pressure, increased resistance of thermal conductivity
◆ 基板中心溫度 ≦25℃ 額定功率 100瓦。Power rated 100W at core temperature ceramic substrate ≦25℃。
◆ 標準TO247模壓封裝尺寸,陶瓷基板外露制造。Standard TO247 package size hole pressure, production of ceramic substrate exposed。
◆ 阻值範圍由 0.2R ~ 1M Ω 誤差率 ±1% ,±5%, TCR ±50/±100/±200ppm/℃。
    Resistance range: 0.2R ~ 1M Ω, Tolerance Range: ±1%, ±5%. TCR: ±50/±100/±200ppm/℃。
◆TO247 封裝(陶瓷基板增強型)和TO220有相同的結果特點,採用了陶瓷基板直接外露結構,並使用特制用金屬片使其額定功率和脈衝電荷能力比較TO220有更大的提升。
    TO247 package enhanced ceramic substrate and TO220 features with the same results, using a ceramic substrate directly exposed structure, and the use of special sheet metal to the rated power and pulse charge capacity is relatively greater increase TO220.